On the other hand, it was almost impossible to obtain a p-type GaN semiconductor due to combinations of high n-type background concentration and low p-type doping activity. The reason behind it was explained in such a manner that the difference between lattice constants and coefficients of thermal expansion of the sapphire substrate and the GaN semiconductor made it difficult to grow a high-quality GaN-based epitaxial layer on the sapphire substrate. Even more, for commercial use of GaN substrates were also unavailable at the era of the late 1990s’. In the late 1980s’ and 1990s’, researchers observed that III–V compounds like a single crystal of GaN are difficult to grow. Electrical doping has been introduced to solve the problems of bipolar doping. This type of proposed approach is known as electrical doping, which does not depend on this type of bipolar doping. Therefore, to compensate for this type of problem, a feasible solution has been incorporated into the domain of doping. It is observed that either p-type or n-type dopants can be inserted but not together. Therefore, some problems arise for the bipolar doping process in wideband semiconductors. This type of performance degradation has been observed severely for wide bandgap materials.įor example, in the case of the minima of high conduction band device, n-type doping is challenging, whereas for maxima of the low valence band device is also complicated. However, some basic problems are related to this type of conventional doping process, for example, doping bottleneck which powerfully affects the device performance. It is observed that an ideal dopant should exhibit an ideal solubility in its host material, and it also exhibits a low defect level. A small amount of addition of impurities determines the dopant concentration and electrical conductivities of the materials. This method has been successfully proved for the semiconductor physics industry. Finally, we conclude with a brief comparative study between electrical and conventional doping methods.ĭoping plays a crucial role in determining physical characteristics and their applications of various organic or inorganic materials, especially for semiconductors. Furthermore, we describe the methods of electrical doping. Then we figure out importance of electrical doping and its importance. Thus, we will review some experimental works at the molecular level along with we review a variety of research works that are performed based on electrical doping. Secondly, we will discuss electrical doping at the molecular level. In this article, we first briefly review the historical roadmap of electrical doping. Significant experimental and theoretical efforts are demonstrated to study the characteristics of electrical doping during the past few decades. This doping process reduces the risk of high temperature, contamination of foreign particles. Electrical doping is a promising strategy that is used for effective tuning of the charge populations, electronic properties, and transmission properties. Many strategies have been discovered for controlling doping in the area of semiconductor physics during the past few decades. Doping is the key feature in semiconductor device fabrication.
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